N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-220AB FP Infineon IRFI4110GPBF

RS stock no.:: 165-5802
Mfr. Part No.:: IRFI4110GPBF
Manufacturer:: Infineon

N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-220AB FP Infineon IRFI4110GPBF

Image representative of range

Subtotal (1 tube of 50 units)**

R 2 052 65

(exc. VAT)

R 2 360 55

(inc. VAT)

2150 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

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Units	Per unit	Per Tube**
50 +	R 41,053	R 2 052,65

**price indicative

RS stock no.:: 165-5802
Mfr. Part No.:: IRFI4110GPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 72A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IRFI4110GPBF

This n-channel MOSFET is designed for high-performance applications, providing efficient current handling and high voltage tolerance. It is essential in various electronic devices and ensures robust operation in challenging environments. Its performance in power switching and thermal management makes it a preferred component in the automation, electronics, and mechanical sectors.

Features & Benefits

• Continuous drain current capability of 72A
• Low Rds(on) resistance for enhanced operational efficiency
• Enhancement mode for effective performance
• Maximum drain-source voltage rating of 100V
• Excellent thermal management up to +175°C
• Improved avalanche ruggedness for added reliability

Applications

• Suitable for high-efficiency synchronous rectification
• Ideal for uninterruptible power supply systems
• Compatible with high-speed power switching
• Utilised in hard-switched and high-frequency circuits

What is the maximum continuous drain current for your application?

The continuous drain current is rated at 72A under optimal conditions, making it suitable for demanding applications.

What is the significance of the gate threshold voltage?

The gate threshold voltage ranges from 2V to 4V, enabling precise control of the switching characteristics.

How does the MOSFET manage thermal performance?

It has a maximum operating temperature rating of +175°C, which supports durability in high-temperature environments.

What advantages does low Rds(on) offer in device performance?

Low Rds(on) decreases power losses during switching, leading to improved overall efficiency.

Can this product handle high-frequency circuits?

Yes, it is specifically designed for hard-switched and high-frequency applications, ensuring consistent performance.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	72 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	61 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	190 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.75mm
Width	4.83mm
Minimum Operating Temperature	-55 °C
Height	16.13mm