Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

R 69,54

(exc. VAT)

R 79,98

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 34.77R 69.54
10 - 18R 33.90R 67.80
20 - 38R 32.885R 65.77
40 - 98R 31.57R 63.14
100 +R 30.305R 60.61

*price indicative

RS stock no.:
688-6850
Mfr. Part No.:
IRF3710ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

82nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

160W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.54mm

Height

8.77mm

Automotive Standard

No

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