Infineon HEXFET Type N-Channel MOSFET, 72 A, 100 V Enhancement, 3-Pin TO-220 IRFI4110GPBF

RS stock no.:: 827-3962
Mfr. Part No.:: IRFI4110GPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 72 A, 100 V Enhancement, 3-Pin TO-220 IRFI4110GPBF

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Subtotal (1 pack of 2 units)*

R 169,62

(exc. VAT)

R 195,06

(inc. VAT)

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In Stock

2,050 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
2 - 48	R 84.81	R 169.62
50 - 98	R 82.69	R 165.38
100 - 248	R 80.21	R 160.42
250 - 498	R 77.00	R 154.00
500 +	R 73.92	R 147.84

*price indicative

RS stock no.:: 827-3962
Mfr. Part No.:: IRFI4110GPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	72A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	61W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	190nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	16.13mm
	Standards/Approvals	No
	Width	4.83 mm
	Length	10.75mm
	Automotive Standard	No
	Distrelec Product Id	304-44-457

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 72A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 61W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 190nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 16.13mm
	Standards/Approvals No
	Width 4.83 mm
	Length 10.75mm
	Automotive Standard No
	Distrelec Product Id 304-44-457

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 72A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IRFI4110GPBF

This n-channel MOSFET is designed for high-performance applications, providing efficient current handling and high voltage tolerance. It is essential in various electronic devices and ensures robust operation in challenging environments. Its performance in power switching and thermal management makes it a preferred component in the automation, electronics, and mechanical sectors.

Features & Benefits

• Continuous drain current capability of 72A

• Low Rds(on) resistance for enhanced operational efficiency

• Enhancement mode for effective performance

• Maximum drain-source voltage rating of 100V

• Excellent thermal management up to +175°C

• Improved avalanche ruggedness for added reliability

Applications

• Suitable for high-efficiency synchronous rectification

• Ideal for uninterruptible power supply systems

• Compatible with high-speed power switching

• Utilised in hard-switched and high-frequency circuits

What is the maximum continuous drain current for your application?

The continuous drain current is rated at 72A under optimal conditions, making it suitable for demanding applications.

What is the significance of the gate threshold voltage?

The gate threshold voltage ranges from 2V to 4V, enabling precise control of the switching characteristics.

How does the MOSFET manage thermal performance?

It has a maximum operating temperature rating of +175°C, which supports durability in high-temperature environments.

What advantages does low Rds(on) offer in device performance?

Low Rds(on) decreases power losses during switching, leading to improved overall efficiency.

Can this product handle high-frequency circuits?

Yes, it is specifically designed for hard-switched and high-frequency applications, ensuring consistent performance.