Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC

Image representative of range

Subtotal (1 reel of 2500 units)*

R 15 927,50

(exc. VAT)

R 18 317,50

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
2500 +R 6.371R 15,927.50

*price indicative

RS stock no.:
919-0281
Mfr. Part No.:
SI4214DDY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

19.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

14.5nC

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links