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Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SiHG30N60E-GE3

RS stock no.:: 787-9421
Mfr. Part No.:: SiHG30N60E-GE3
Manufacturer:: Vishay

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SiHG30N60E-GE3

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Bulk discount available

Subtotal (1 unit)*

R 136,29

(exc. VAT)

R 156,73

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

489 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 49	R 136.29
50 - 249	R 132.88
250 - 999	R 128.89
1000 - 4999	R 123.73
5000 +	R 118.78

*price indicative

RS stock no.:: 787-9421
Mfr. Part No.:: SiHG30N60E-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Typical Gate Charge Qg @ Vgs	85nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	15.87mm
	Height	20.82mm
	Width	5.31 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Typical Gate Charge Qg @ Vgs 85nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 15.87mm
	Height 20.82mm
	Width 5.31 mm
	Standards/Approvals No
	Automotive Standard No

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SiHG30N60E-GE3

FREE delivery for orders over R 1,500.00

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

MOSFET Transistors, Vishay Semiconductor

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