Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1

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Subtotal (1 pack of 25 units)*

R 222,875

(exc. VAT)

R 256,30

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100R 8.915R 222.88
125 - 475R 8.692R 217.30
500 - 975R 8.432R 210.80
1000 - 2475R 8.094R 202.35
2500 +R 7.771R 194.28

*price indicative

RS stock no.:
130-0916
Mfr. Part No.:
IPN50R950CEATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.6A

Maximum Drain Source Voltage Vds

550V

Series

CoolMOS CE

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

10.5nC

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.7 mm

Height

1.7mm

Length

6.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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