Infineon CoolMOS CE Type N-Channel MOSFET, 6.6 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R950CEATMA1
- RS stock no.:
- 130-0916
- Mfr. Part No.:
- IPN50R950CEATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 216,775
(exc. VAT)
R 249,30
(inc. VAT)
Add 200 units to get free delivery
Last RS stock
- Final 100 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 8.671 | R 216.78 |
| 125 - 475 | R 8.454 | R 211.35 |
| 500 - 975 | R 8.20 | R 205.00 |
| 1000 - 2475 | R 7.872 | R 196.80 |
| 2500 + | R 7.558 | R 188.95 |
*price indicative
- RS stock no.:
- 130-0916
- Mfr. Part No.:
- IPN50R950CEATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Series | CoolMOS CE | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Forward Voltage Vf | 0.83V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 550V | ||
Series CoolMOS CE | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Forward Voltage Vf 0.83V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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