IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247 IXTH110N25T

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Subtotal (1 unit)*

R 182,81

(exc. VAT)

R 210,23

(inc. VAT)

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Per unit
1 - 4R 182.81
5 - 9R 178.24
10 - 24R 172.89
25 - 49R 165.97
50 +R 159.33

*price indicative

RS stock no.:
125-8047
Distrelec Article No.:
302-53-421
Mfr. Part No.:
IXTH110N25T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-247

Series

Trench

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

694W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.46mm

Length

16.26mm

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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