IXYS Trench Type N-Channel MOSFET, 110 A, 250 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

R 3 012,90

(exc. VAT)

R 3 464,70

(inc. VAT)

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Units
Per unit
Per Tube*
30 +R 100.43R 3,012.90

*price indicative

RS stock no.:
168-4583
Mfr. Part No.:
IXTH110N25T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

250V

Series

Trench

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Power Dissipation Pd

694W

Maximum Operating Temperature

150°C

Height

21.46mm

Width

5.3 mm

Standards/Approvals

No

Length

16.26mm

Automotive Standard

No

N-Channel Trench-Gate Power MOSFET, IXYS


Trench Gate MOSFET Technology

Low on-state Resistance RDS(on)

Superior avalanche ruggedness

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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