IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X
- RS stock no.:
- 146-4249
- Mfr. Part No.:
- IXFN110N85X
- Manufacturer:
- IXYS
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Bulk discount available
Subtotal (1 tube of 10 units)*
R 14 303,79
(exc. VAT)
R 16 449,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 04 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 40 | R 1,430.379 | R 14,303.79 |
| 50 - 90 | R 1,394.62 | R 13,946.20 |
| 100 - 240 | R 1,352.781 | R 13,527.81 |
| 250 - 490 | R 1,298.67 | R 12,986.70 |
| 500 + | R 1,246.723 | R 12,467.23 |
*price indicative
- RS stock no.:
- 146-4249
- Mfr. Part No.:
- IXFN110N85X
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | SOT-227 | |
| Series | HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1.17kW | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 425nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.07 mm | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type SOT-227 | ||
Series HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1.17kW | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 425nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 25.07 mm | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Automotive Standard No | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Related links
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