N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

RS stock no.:: 168-4726
Mfr. Part No.:: IXFB110N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

Image representative of range

Temporarily out of stock - back order for despatch when stock is available

Price (Excl VAT) Each (In a Tube of 25)

R 437,634

(exc. VAT)

R 503,279

(inc. VAT)

Units	Per unit	Per Tube*
25 +	R 437,634	R 10 940,85

*price indicative

RS stock no.:: 168-4726
Mfr. Part No.:: IXFB110N60P3
Manufacturer:: IXYS

IXFB110N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	600 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	56 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	5.31mm
Length	20.29mm
Typical Gate Charge @ Vgs	245 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series