STMicroelectronics N Channel Mosfet STH4N150 N-Channel Power MOSFET, 2.6 A, 1.5 kV MOSFET, 3-Pin H2PAK-2 STH4N150-2AG

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Subtotal (1 reel of 1000 units)*

R 48 536,00

(exc. VAT)

R 55 816,00

(inc. VAT)

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1000 +R 48.536R 48,536.00

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RS stock no.:
877-308
Mfr. Part No.:
STH4N150-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

1.5kV

Package Type

H2PAK-2

Series

STH4N150

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

MOSFET

Typical Gate Charge Qg @ Vgs

35.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

30V

Transistor Configuration

N Channel Mosfet

Maximum Operating Temperature

150°C

Height

15.8mm

Width

4.7mm

Length

10.4mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET developed by using the PowerMESH technology. This device is designed to ensure a high level of voltage and robustness for the automotive market.

Very low gate charge

100% avalanche tested

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