STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 1.5 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH2N120K5-2AG

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Subtotal (1 tape of 2 units)*

R 178,24

(exc. VAT)

R 204,98

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18R 89.12R 178.24
20 - 198R 86.89R 173.78
200 +R 84.285R 168.57

*price indicative

Packaging Options:
RS stock no.:
151-438
Mfr. Part No.:
STH2N120K5-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

MDmesh K5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

5.3nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

4.7mm

Width

10.4 mm

Length

15.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

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