STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 3-Pin H2PAK-2 STH13N120K5-2AG

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R 168,59

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R 193,88

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Per unit
1 - 9R 168.59
10 - 99R 164.38
100 - 499R 159.45
500 +R 153.07

*price indicative

Packaging Options:
RS stock no.:
151-914
Mfr. Part No.:
STH13N120K5-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

1200V

Series

MDmesh K5

Package Type

H2PAK-2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.69Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

44.2nC

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

15.8mm

Standards/Approvals

RoHS

Width

10.4 mm

Height

4.7mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.

AEC Q101 qualified

Industry’s lowest RDS(on) x area

Industry’s best FoM

Ultra low gate charge

100% avalanche tested

Zener protected

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