STMicroelectronics STH280N10F8-2 N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK-2

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R 68,02

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R 78,22

(inc. VAT)

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Units
Per unit
1 - 9R 68.02
10 - 24R 66.32
25 - 99R 64.33
100 - 499R 61.76
500 +R 59.29

*price indicative

RS stock no.:
800-457
Mfr. Part No.:
STH280N10F8-2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH280N10F8-2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

177nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

4V

Maximum Operating Temperature

175°C

Height

15.8mm

Length

10.4mm

Standards/Approvals

ECOPACK

Width

4.7mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)