STMicroelectronics ST8L65N0 N channel-Channel Power MOSFET, 35 A, 650 V N, 5-Pin PowerFlat HV ST8L65N050DM9
- RS stock no.:
- 762-551
- Mfr. Part No.:
- ST8L65N050DM9
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
R 83,47
(exc. VAT)
R 95,99
(inc. VAT)
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In Stock
- 300 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | R 83.47 |
| 10 - 49 | R 80.98 |
| 50 - 99 | R 78.49 |
| 100 + | R 67.63 |
*price indicative
- RS stock no.:
- 762-551
- Mfr. Part No.:
- ST8L65N050DM9
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFlat HV | |
| Series | ST8L65N0 | |
| Mount Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFlat HV | ||
Series ST8L65N0 | ||
Mount Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
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