STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET, 181 A, 80 V N, 8-Pin PowerFLAT STL180N8F8

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R 32,49

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R 37,36

(inc. VAT)

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Units
Per unit
1 - 9R 32.49
10 - 24R 28.48
25 - 99R 25.59
100 - 499R 22.03
500 +R 18.47

*price indicative

RS stock no.:
898-600
Mfr. Part No.:
STL180N8F8
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

181A

Maximum Drain Source Voltage Vds

80V

Series

STL

Package Type

PowerFLAT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

N

Maximum Power Dissipation Pd

167W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

85nC

Transistor Configuration

Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

ECOPACK2

Width

5mm

Height

1mm

Length

5.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.

MSL1 grade

100% avalanche tested

Low gate charge

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