STMicroelectronics 650 V 6 A Diode 5-Pin PowerFlat HV STPSC6H065DLF
- RS stock no.:
- 201-0867
- Mfr. Part No.:
- STPSC6H065DLF
- Manufacturer:
- STMicroelectronics
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R 294,87
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 45 | R 58.974 | R 294.87 | - |
| 50 - 95 | R 57.50 | R 287.50 | R 73,70 |
| 100 - 245 | R 55.776 | R 278.88 | R 319,80 |
| 250 - 995 | R 53.544 | R 267.72 | R 1 357,50 |
| 1000 + | R 51.402 | R 257.01 | R 7 572,00 |
*price indicative
- RS stock no.:
- 201-0867
- Mfr. Part No.:
- STPSC6H065DLF
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | PowerFlat HV | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Pin Count | 5 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Peak Reverse Current Ir | 50μA | |
| Maximum Forward Voltage Vf | 1.95V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.4mm | |
| Standards/Approvals | RoHS | |
| Width | 7.6mm | |
| Height | 750μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type PowerFlat HV | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Pin Count 5 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Peak Reverse Current Ir 50μA | ||
Maximum Forward Voltage Vf 1.95V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 8.4mm | ||
Standards/Approvals RoHS | ||
Width 7.6mm | ||
Height 750μm | ||
Automotive Standard No | ||
The STMicroelectronics 650V power schottky silicon carbide diode has a current rating of 6A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. It enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom & network, industrial or renewable energy domain.
Less-than-1mm height package
High creepage package
No or negligible reverse recovery
Temperature independent switching behaviour
High forward surge capability
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