Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3
- RS stock no.:
- 653-175
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 584,15
(exc. VAT)
R 2 971,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | R 51.683 | R 2,584.15 |
| 250 + | R 50.391 | R 2,519.55 |
*price indicative
- RS stock no.:
- 653-175
- Mfr. Part No.:
- SIHB155N60EF-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.79mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Operating Temperature 150°C | ||
Length 2.79mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.
Pb Free
Halogen free
RoHS compliant
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