Vishay EF Type N-Channel Single MOSFETs, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3

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Subtotal (1 tube of 50 units)*

R 1 248,60

(exc. VAT)

R 1 435,90

(inc. VAT)

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  • 1,000 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 200R 24.972R 1,248.60
250 +R 24.348R 1,217.40

*price indicative

RS stock no.:
653-139
Mfr. Part No.:
SIHP11N80AEF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220AB

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.483Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay Power MOSFET designed for high-voltage switching applications. It features a fast body diode, low figure-of-merit (FOM), and reduced effective capacitance for improved efficiency. Housed in a TO-220AB package, it's Ideal for server, telecom, SMPS, and power factor correction supplies.

Pb Free

Halogen free

RoHS compliant

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