Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3
- RS stock no.:
- 653-077
- Mfr. Part No.:
- SIHR100N60EF-T1GE3
- Manufacturer:
- Vishay
Image representative of range
Subtotal (1 reel of 3000 units)*
R 242 517,00
(exc. VAT)
R 278 895,00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 80.839 | R 242,517.00 |
*price indicative
- RS stock no.:
- 653-077
- Mfr. Part No.:
- SIHR100N60EF-T1GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.108Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.108Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET equipped with a fast body diode for enhanced switching efficiency. It offers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Packaged in PowerPAK 8x8LR, it's Ideal for server, telecom, lighting, industrial, and solar power applications.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay EF Series N-Channel MOSFET 600 V, 8-Pin PowerPAK SIHR100N60EF-T1GE3
- Vishay EF Series N-Channel MOSFET 600 V, 8-Pin PowerPAK SIHR120N60EF-T1GE3
- Vishay EF Series N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB28N60EF-GE3
- Vishay EF Series N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB155N60EF-GE3
- Vishay E Series N-Channel MOSFET 600 V, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay EF Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SiHG70N60EF-GE3
- Vishay EF Series N-Channel MOSFET 600 V, 3-Pin TO-247AC SIHG33N60EF-GE3
- Vishay EF-Series N-Channel MOSFET 800 V, 3-Pin TO-220AB SIHP15N80AEF-GE3
