Vishay EF Type N-Channel Power MOSFET, 31 A, 600 V Enhancement, 8-Pin PowerPAK
- RS stock no.:
- 653-082
- Mfr. Part No.:
- SIHR120N60EF-T1GE3
- Manufacturer:
- Vishay
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R 107,89
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R 124,07
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | R 107.89 |
| 10 - 49 | R 105.19 |
| 50 - 99 | R 102.03 |
| 100 + | R 97.95 |
*price indicative
- RS stock no.:
- 653-082
- Mfr. Part No.:
- SIHR120N60EF-T1GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.125Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.42mm | |
| Standards/Approvals | RoHS | |
| Width | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.125Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.42mm | ||
Standards/Approvals RoHS | ||
Width 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 31A Maximum Continuous Drain Current - SIHR120N60EF-T1GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion roles in industrial and electronic systems. It operates as an enhancement-mode device suitable for applications requiring robust high-voltage handling, fast gate control and surface-mounted assembly.
Features and Benefits:
• 600V rating enables high-voltage switching applications • 31A continuous drain current supports substantial load handling • 0.125Ω on-resistance reduces conduction losses • 45nC typical gate charge allows predictable switching behaviour • 278W power dissipation permits high-power operation • -55°C to 150°C range supports wide thermal environments
Applications
• Suitable for high-voltage SMPS and power supplies • Ideal for industrial motor drives and inverters • Used for inductive load switching in automation systems • Can be used for high-voltage DC-DC converters • Suitable for power stages in welding and heating controls
What package and mounting form does it use for PCB assembly?
It is supplied in a PowerPAK surface-mount package with an 8-pin configuration suited to automated placement.
What gate voltage limits must designers observe?
The maximum gate-to-source rating is 30V, so gate drive circuits should remain within this boundary.
How should thermal management be approached for high-power tasks?
Design should account for the 278W dissipation capability with appropriate PCB copper, thermal vias or heatsinking to maintain junction temperatures within limits.
What maximum drain-source voltage can be expected during operation?
The device is rated to withstand up to 600V between drain and source under specified conditions.
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