Vishay EF Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- RS stock no.:
- 653-078
- Mfr. Part No.:
- SIHR100N60EF-T1GE3
- Manufacturer:
- Vishay
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R 154,41
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R 177,57
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | R 154.41 |
| 10 - 49 | R 150.55 |
| 50 - 99 | R 146.03 |
| 100 + | R 140.19 |
*price indicative
- RS stock no.:
- 653-078
- Mfr. Part No.:
- SIHR100N60EF-T1GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.108Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.42mm | |
| Standards/Approvals | RoHS | |
| Width | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.108Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Operating Temperature 150°C | ||
Length 10.42mm | ||
Standards/Approvals RoHS | ||
Width 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60EF-T1GE3
This power MOSFET is a high-voltage N-channel switch designed for surface-mount power conversion and switching applications. It operates within a broad temperature range suitable for demanding industrial environments and is intended for use where robust drain-source voltage handling and elevated power dissipation are required. The component is supplied in a low-profile PowerPAK package to support Compact board layouts and effective thermal management.
Features and Benefits:
• 600V maximum Vds delivers high-voltage switching capability • 38A continuous drain current enables substantial load handling • 0.108Ω Rds(on) minimises conduction losses at rated current • 347W maximum Pd supports high-power dissipation needs • 35nC typical gate charge aids efficient switching performance
Applications
• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive inverter stages • Used for power factor correction circuits in AC systems • Can be used for DC-DC converters in automation equipment • Suitable for high-voltage switching in power distribution units
What limits should I observe for gate-drive voltage?
The gate-source voltage must not exceed 30V to prevent gate dielectric stress.
How does thermal endurance relate to operating limits?
The device is rated to operate up to 150°C junction temperature, allowing continued operation under elevated thermal conditions with appropriate PCB heat-sinking.
What is the acceptable ambient temperature range for deployment?
It supports operation down to -55°C, making it suitable for low-temperature industrial environments.
How many pins does the package provide for board connection?
The component uses an 8-pin configuration in the PowerPAK surface-mount package.
Is this intended for automotive qualification?
It is not specified as meeting automotive standard approvals.
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