Vishay EF Type N-Channel MOSFET, 16 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- RS stock no.:
- 200-6812
- Mfr. Part No.:
- SIHH186N60EF-T1GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 461,50
(exc. VAT)
R 530,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 95 | R 92.30 | R 461.50 |
| 100 - 495 | R 89.992 | R 449.96 |
| 500 - 995 | R 87.292 | R 436.46 |
| 1000 - 1495 | R 83.80 | R 419.00 |
| 1500 + | R 80.448 | R 402.24 |
*price indicative
- RS stock no.:
- 200-6812
- Mfr. Part No.:
- SIHH186N60EF-T1GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Width | 1.05 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 8.1mm | ||
Width 1.05 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHH186N60EF-T1GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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