Vishay E Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK
- RS stock no.:
- 653-080
- Mfr. Part No.:
- SIHR100N60E-T1-GE3
- Manufacturer:
- Vishay
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R 117,70
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R 135,36
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | R 117.70 |
| 10 - 49 | R 114.76 |
| 50 - 99 | R 111.32 |
| 100 + | R 106.87 |
*price indicative
- RS stock no.:
- 653-080
- Mfr. Part No.:
- SIHR100N60E-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 347W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.42mm | |
| Standards/Approvals | RoHS | |
| Width | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 347W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.42mm | ||
Standards/Approvals RoHS | ||
Width 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60E-T1-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and control tasks in industrial electronics. It operates as a surface-mount transistor suitable for power conversion and high-voltage switching environments, offering a balance of voltage handling and thermal endurance for use in demanding assemblies.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching capability • 38A continuous drain current supports substantial load currents • 0.105Ω Rds(on) minimises conduction losses during operation • 347W power dissipation allows sustained thermal loading • 34nC typical gate charge permits efficient gate-drive control • -55°C to 150°C operating range supports extreme-temperature operation
Applications
• Suitable for high-voltage power converters in industrial automation • Ideal for motor-drive front-ends requiring robust switching • Used for switch-mode power supplies handling elevated voltages • Can be used for power-factor correction stages in electrical systems • Used with gate drivers in high-voltage inverter designs
What mounting style does it require for assembly?
It is designed for surface mounting in a PowerPAK package, requiring standard SMT reflow profiles and appropriate copper planning for heat dissipation.
How does gate-drive voltage affect switching?
The device tolerates up to 30V on the gate relative to source
utilising recommended gate voltages optimises turn-on speed while avoiding gate overvoltage.
What thermal considerations are needed for high-power applications?
Given the 347W power dissipation rating, adequate PCB copper area and thermal vias are necessary to transfer heat away from the package to maintain junction temperatures below maximum limits.
Is this device suitable for automotive designs?
It is not specified as automotive-grade, so suitability depends on system-level requirements and any additional qualification needed by the designer.
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