onsemi NTT Type N-Channel Single MOSFETs, 178 A, 40 V Enhancement, 8-Pin WDFN8 NTTFS1D4N04XMTAG
- RS stock no.:
- 648-510
- Mfr. Part No.:
- NTTFS1D4N04XMTAG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 5 units)*
R 131,48
(exc. VAT)
R 151,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 02 September 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 26.296 | R 131.48 |
| 50 - 245 | R 25.638 | R 128.19 |
| 250 - 495 | R 24.868 | R 124.34 |
| 500 + | R 23.874 | R 119.37 |
*price indicative
- RS stock no.:
- 648-510
- Mfr. Part No.:
- NTTFS1D4N04XMTAG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 178A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTT | |
| Package Type | WDFN8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.43mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 35.4nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 178A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTT | ||
Package Type WDFN8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.43mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 35.4nC | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in applications.
Low RDS(on)
Low Capacitance
Small Footprint
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