ROHM SH8MD5HT Type P, Type N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin SOP-8 SH8MD5HTB1
- RS stock no.:
- 687-485
- Mfr. Part No.:
- SH8MD5HTB1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 2 units)*
R 24,61
(exc. VAT)
R 28,302
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 48 | R 12.305 | R 24.61 |
| 50 - 198 | R 11.995 | R 23.99 |
| 200 - 998 | R 11.635 | R 23.27 |
| 1000 - 1998 | R 11.17 | R 22.34 |
| 2000 + | R 10.725 | R 21.45 |
*price indicative
- RS stock no.:
- 687-485
- Mfr. Part No.:
- SH8MD5HTB1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P, Type N | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SOP-8 | |
| Series | SH8MD5HT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 167mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 2.0W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.30mm | |
| Width | 5.20 mm | |
| Standards/Approvals | RoHS | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P, Type N | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SOP-8 | ||
Series SH8MD5HT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 167mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 2.0W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.30mm | ||
Width 5.20 mm | ||
Standards/Approvals RoHS | ||
Height 1.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM N channel and P channel Power MOSFET designed for efficient power management in electronic applications. This device excels in providing low on-resistance and significant power dissipation capabilities, making it an ideal choice for motor drive applications. With both N channel and P channel configurations, it enables versatile circuit designs in compact SOP8 packages. The MOSFETs robust construction ensures it meets stringent requirements for reliability and compliance, including RoHS and halogen-free certifications, which are essential for modern electronic components.
Low on resistance enhances efficiency and thermal performance
Compact SOP8 package provides space-saving solutions for PCB designs
Pb free and RoHS compliant, ensuring environmentally responsible manufacturing
Halogen-free construction promotes safety and sustainability
Suitable for both N-channel and P-channel applications, offering design flexibility
Reliable operation with 100% Rg and UIS testing for high-quality assurance
Exceptional avalanche ratings for robust handling of transient conditions.
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