ROHM RS6G122CH Type N-Channel Single MOSFETs, -40 V Enhancement, 8-Pin HSOP-8 RS6G122CHTB1

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Subtotal (1 tape of 2 units)*

R 54,15

(exc. VAT)

R 62,272

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18R 27.075R 54.15
20 - 48R 26.40R 52.80
50 - 198R 25.61R 51.22
200 - 998R 24.585R 49.17
1000 +R 23.60R 47.20

*price indicative

Packaging Options:
RS stock no.:
687-439
Mfr. Part No.:
RS6G122CHTB1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

-40V

Package Type

HSOP-8

Series

RS6G122CH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.20mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

52nC

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Width

3 mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
JP
The ROHM Power MOSFET is designed to deliver high efficiency in demanding applications. Featuring a maximum operating voltage of 40V and capable of handling a continuous drain current of up to 225A, it is ideal for use in motor drives and DC/DC converters. The robust HSOP8 package ensures effective thermal management with a low thermal resistance, promoting reliable performance even under high load conditions. With stringent RoHS compliance, the device is suitable for environmentally-conscious designs while guaranteeing consistent reliability and safety in various electronic applications.

Low on resistance of 1.20mΩ, enhancing efficiency

High power package (HSOP8) for effective thermal dissipation

Pb free plating meets RoHS standards for environmental safety

Halogen-free construction ensures compliance with safety regulations

100% Rg and UIS tested for reliability under harsh conditions

Designed for high-performance applications with extreme current capabilities

Avalanche-rated for single pulse capability up to 40A, ensuring robustness

Integrated safety features address potential failure scenarios

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