onsemi NTT Type N-Channel Single MOSFETs, 65 A, 40 V Enhancement, 8-Pin WDFN8 NTTFS4D9N04XMTAG
- RS stock no.:
- 648-506
- Mfr. Part No.:
- NTTFS4D9N04XMTAG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 20 units)*
R 205,00
(exc. VAT)
R 235,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | R 10.25 | R 205.00 |
| 200 - 980 | R 9.994 | R 199.88 |
| 1000 - 1980 | R 9.694 | R 193.88 |
| 2000 + | R 9.306 | R 186.12 |
*price indicative
- RS stock no.:
- 648-506
- Mfr. Part No.:
- NTTFS4D9N04XMTAG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | WDFN8 | |
| Series | NTT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type WDFN8 | ||
Series NTT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Low RDS(on)
Low Capacitance
Small Footprint of 3.3 x 3.3 mm
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