Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1200 V N, 4-Pin Tape & Reel DM400S12TDRB

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Subtotal (1 unit)*

R 220,24

(exc. VAT)

R 253,28

(inc. VAT)

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Per unit
1 - 9R 220.24
10 - 99R 214.73
100 - 499R 208.29
500 - 999R 199.96
1000 +R 191.96

*price indicative

RS stock no.:
427-757
Mfr. Part No.:
DM400S12TDRB
Manufacturer:
Starpower
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Brand

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

1200V

Series

DOSEMI

Package Type

Tape & Reel

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

55.2mΩ

Channel Mode

N

Maximum Power Dissipation Pd

268W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

86.6nC

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

3.85V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Low inductance case avoid oscillations

ROHS

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