ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001
- RS stock no.:
- 144-2255
- Mfr. Part No.:
- BSM300D12P2E001
- Manufacturer:
- ROHM
Image representative of range
Subtotal (1 tray of 4 units)*
R 79 021,892
(exc. VAT)
R 90 875,176
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tray* |
|---|---|---|
| 4 + | R 19,755.473 | R 79,021.89 |
*price indicative
- RS stock no.:
- 144-2255
- Mfr. Part No.:
- BSM300D12P2E001
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | BSM | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 1875W | |
| Maximum Operating Temperature | 150°C | |
| Height | 17mm | |
| Length | 152mm | |
| Width | 57.95 mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series BSM | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 1875W | ||
Maximum Operating Temperature 150°C | ||
Height 17mm | ||
Length 152mm | ||
Width 57.95 mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Related links
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM300D12P2E001
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM180D12P3C007
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM120D12P2C005
- Infineon CoolSiC Dual SiC N-Channel SiC Power Module 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- onsemi SiC N-Channel SiC Power Module 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT10N120AG
- STMicroelectronics SCT SiC N-Channel SiC Power Module 1200 V Depletion, 3-Pin HiP247 SCT20N120AG
- STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module 650 V, 3-Pin HiP247 SCTWA35N65G2V