Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1200 V N, 4-Pin Tape & Reel DM800S12TDRB
- RS stock no.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Bulk discount available
Subtotal (1 unit)*
R 135,94
(exc. VAT)
R 156,33
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 30 unit(s) shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 135.94 |
| 10 - 99 | R 132.54 |
| 100 - 499 | R 128.56 |
| 500 - 999 | R 123.42 |
| 1000 + | R 118.48 |
*price indicative
- RS stock no.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Specification
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Product Type | SiC Mosfet without Diode | |
| Channel Type | Single Switch | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | DOSEMI | |
| Package Type | Tape & Reel | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.1V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 162W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Product Type SiC Mosfet without Diode | ||
Channel Type Single Switch | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series DOSEMI | ||
Package Type Tape & Reel | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.1V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 162W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
Related links
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