STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2
- RS stock no.:
- 201-4415
- Mfr. Part No.:
- SCT20N120H
- Manufacturer:
- STMicroelectronics
Image representative of range
Subtotal (1 reel of 1000 units)*
R 203 202,00
(exc. VAT)
R 233 682,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 28 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | R 203.202 | R 203,202.00 |
*price indicative
- RS stock no.:
- 201-4415
- Mfr. Part No.:
- SCT20N120H
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | SiC MOSFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 203mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Length | 15.8mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series SiC MOSFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 203mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Length 15.8mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SiC MOSFET SiC N-Channel MOSFET 1200 V, 3-Pin H2PAK-2 SCT20N120H
- STMicroelectronics STB37N60 SiC N-Channel MOSFET 1200 V, 3-Pin H2PAK-2 STH12N120K5-2
- STMicroelectronics SiC MOSFET SiC N-Channel MOSFET 900 V, 3-Pin TO-220FP STF16N90K5
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics STripFET H7 N-Channel MOSFET 80 V, 3-Pin H2PAK-2 STH270N8F7-2
- STMicroelectronics DeepGate 110 A 3-Pin H2PAK-2 STH150N10F7-2
- STMicroelectronics MDmesh N-Channel MOSFET 1500 V, 3-Pin H2PAK-2 STH3N150-2
- STMicroelectronics STH200 N-Channel MOSFET 100 V, 3-Pin H2PAK-2 STH200N10WF7-2