onsemi PowerTrench N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 FDB035N10A
- RS stock no.:
- 802-3200
- Mfr. Part No.:
- FDB035N10A
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 192,13
(exc. VAT)
R 220,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 52 unit(s) ready to ship from another location
- Plus 200 unit(s) shipping from 22 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 96.065 | R 192.13 |
| 10 - 18 | R 93.665 | R 187.33 |
| 20 - 98 | R 90.855 | R 181.71 |
| 100 - 198 | R 87.22 | R 174.44 |
| 200 + | R 83.73 | R 167.46 |
*price indicative
- RS stock no.:
- 802-3200
- Mfr. Part No.:
- FDB035N10A
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1.25V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1.25V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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