Infineon IKW50N65EH5XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Image representative of range

View all IGBTs

Subtotal (1 pack of 2 units)*

R 201,43

(exc. VAT)

R 231,644

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 208 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 +R 100.715R 201.43

*price indicative

Packaging Options:
RS stock no.:
226-6118
Mfr. Part No.:
IKW50N65EH5XKSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

275W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Width

16.13 mm

Standards/Approvals

JEDEC

Length

41.42mm

Automotive Standard

No

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg

Factor 2 reduction in switching losses

200mV reduction in VCEsat

Related links