STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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R 95,34

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R 109,64

(inc. VAT)

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1 - 24R 95.34
25 - 99R 92.96
100 - 249R 90.17
250 +R 86.56

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Packaging Options:
RS stock no.:
792-5802
Mfr. Part No.:
STGW60H65DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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