STMicroelectronics STGW40H65DFB IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 140,78

(exc. VAT)

R 161,90

(inc. VAT)

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Per unit
Per Pack*
2 - 24R 70.39R 140.78
26 - 98R 68.63R 137.26
100 - 248R 66.57R 133.14
250 - 498R 63.905R 127.81
500 +R 61.35R 122.70

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Packaging Options:
RS stock no.:
792-5795
Mfr. Part No.:
STGW40H65DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

283 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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