Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- RS stock no.:
- 259-1533
- Mfr. Part No.:
- IKW50N65F5FKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 153,81
(exc. VAT)
R 176,882
(inc. VAT)
Add 22 units to get free delivery
In Stock
- Plus 36 unit(s) shipping from 13 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 76.905 | R 153.81 |
| 10 - 98 | R 74.98 | R 149.96 |
| 100 - 238 | R 72.73 | R 145.46 |
| 240 - 478 | R 69.82 | R 139.64 |
| 480 + | R 67.025 | R 134.05 |
*price indicative
- RS stock no.:
- 259-1533
- Mfr. Part No.:
- IKW50N65F5FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | PG-TO247-3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type PG-TO247-3 | ||
The Infineon high speed hard-switching IGBT is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.
650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
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