Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

R 2 131,38

(exc. VAT)

R 2 451,09

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30R 71.046R 2,131.38
60 - 60R 69.27R 2,078.10
90 +R 67.192R 2,015.76

*price indicative

RS stock no.:
249-6938
Mfr. Part No.:
IKW40N65RH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Number of Transistors

2

Maximum Power Dissipation

250 W

Package Type

PG-TO247-3

Configuration

Single

The Infineon schottky barrier diode has ultra low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C.

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