Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

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R 167,84

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R 193,02

(inc. VAT)

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1 - 4R 167.84
5 - 9R 163.64
10 - 14R 158.73
15 - 19R 152.38
20 +R 146.28

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Packaging Options:
RS stock no.:
249-6944
Mfr. Part No.:
IKW50N65SS5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Number of Transistors

2

Maximum Power Dissipation

274 W

Configuration

Single

Package Type

PG-TO247-3

The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation Cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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