Infineon IKW75N65SS5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3

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R 238,94

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R 274,78

(inc. VAT)

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1 - 4R 238.94
5 - 9R 232.97
10 - 14R 225.98
15 - 19R 216.94
20 +R 208.26

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Packaging Options:
RS stock no.:
249-6948
Mfr. Part No.:
IKW75N65SS5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

395 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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