Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

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Subtotal (1 unit)*

R 139,30

(exc. VAT)

R 160,20

(inc. VAT)

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1 - 4R 139.30
5 - 9R 135.82
10 - 14R 131.75
15 - 19R 126.48
20 +R 121.42

*price indicative

Packaging Options:
RS stock no.:
249-6941
Mfr. Part No.:
IKW50N65RH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

305 W

Number of Transistors

2

Configuration

Single

Package Type

PG-TO247-3

The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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