Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

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Subtotal (1 pack of 2 units)*

R 191,81

(exc. VAT)

R 220,582

(inc. VAT)

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  • 1,102 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 95.905R 191.81
10 - 48R 93.505R 187.01
50 - 98R 90.70R 181.40
100 - 248R 87.07R 174.14
250 +R 83.585R 167.17

*price indicative

Packaging Options:
RS stock no.:
253-3509
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

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