Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

R 197,18

(exc. VAT)

R 226,76

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,102 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8R 98.59R 197.18
10 - 48R 96.125R 192.25
50 - 98R 93.24R 186.48
100 - 248R 89.51R 179.02
250 +R 85.93R 171.86

*price indicative

Packaging Options:
RS stock no.:
253-3509
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
Find similar products by selecting one or more attributes.
Select all

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Package Type

TO-247

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

Related links