Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N
- RS stock no.:
- 253-3503
- Mfr. Part No.:
- BIDNW30N60H3
- Manufacturer:
- Bourns
Bulk discount available
Subtotal (1 pack of 2 units)*
R 97,17
(exc. VAT)
R 111,746
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,294 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 48.585 | R 97.17 |
| 10 - 48 | R 47.37 | R 94.74 |
| 50 - 98 | R 45.95 | R 91.90 |
| 100 - 248 | R 44.11 | R 88.22 |
| 250 + | R 42.345 | R 84.69 |
*price indicative
- RS stock no.:
- 253-3503
- Mfr. Part No.:
- BIDNW30N60H3
- Manufacturer:
- Bourns
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 230 W | |
| Number of Transistors | 1 | |
| Configuration | Single Diode | |
| Package Type | TO-247N | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 230 W | ||
Number of Transistors 1 | ||
Configuration Single Diode | ||
Package Type TO-247N | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant
Related links
- Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N
- Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
- Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
- Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247
- Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
- Infineon IKB10N60TATMA1 Single Collector Single Gate IGBT, 30 A 600 V TO-263-3
- ROHM RGS30TSX2GC11 Single IGBT 3-Pin TO-247N
- ROHM RGS30TSX2DHRC11 Single IGBT 3-Pin TO-247N
