Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

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Subtotal (1 pack of 2 units)*

R 94,54

(exc. VAT)

R 108,72

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 47.27R 94.54
10 - 48R 46.09R 92.18
50 - 98R 44.705R 89.41
100 - 248R 42.915R 85.83
250 +R 41.20R 82.40

*price indicative

Packaging Options:
RS stock no.:
253-3503
Mfr. Part No.:
BIDNW30N60H3
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

230 W

Configuration

Single Diode

Package Type

TO-247N

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant

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