Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247

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Subtotal (1 pack of 2 units)*

R 115,31

(exc. VAT)

R 132,606

(inc. VAT)

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  • 2,196 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 57.655R 115.31
10 - 48R 56.215R 112.43
50 - 98R 54.53R 109.06
100 - 248R 52.35R 104.70
250 +R 50.255R 100.51

*price indicative

Packaging Options:
RS stock no.:
253-3505
Mfr. Part No.:
BIDW20N60T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

192 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant

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