Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

R 102,01

(exc. VAT)

R 117,312

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,748 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8R 51.005R 102.01
10 - 48R 49.73R 99.46
50 - 98R 48.24R 96.48
100 - 248R 46.31R 92.62
250 +R 44.46R 88.92

*price indicative

Packaging Options:
RS stock no.:
253-3507
Mfr. Part No.:
BIDW30N60T
Manufacturer:
Bourns
Find similar products by selecting one or more attributes.
Select all

Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

230 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

Related links