Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

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Subtotal (1 tube of 600 units)*

R 30 697,20

(exc. VAT)

R 35 301,60

(inc. VAT)

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Units
Per unit
Per Tube*
600 +R 51.162R 30,697.20

*price indicative

RS stock no.:
253-3508
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

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