Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247

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Subtotal (1 tube of 600 units)*

R 23 973,60

(exc. VAT)

R 27 569,40

(inc. VAT)

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Units
Per unit
Per Tube*
600 +R 39.956R 23,973.60

*price indicative

RS stock no.:
253-3506
Mfr. Part No.:
BIDW30N60T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

230 W

Package Type

TO-247

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

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