Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
- RS stock no.:
- 253-3500
- Mfr. Part No.:
- BIDD05N60T
- Manufacturer:
- Bourns
Bulk discount available
Subtotal (1 pack of 5 units)*
R 134,28
(exc. VAT)
R 154,42
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,430 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 26.856 | R 134.28 |
| 50 - 95 | R 26.184 | R 130.92 |
| 100 - 245 | R 25.398 | R 126.99 |
| 250 - 995 | R 24.382 | R 121.91 |
| 1000 + | R 23.406 | R 117.03 |
*price indicative
- RS stock no.:
- 253-3500
- Mfr. Part No.:
- BIDD05N60T
- Manufacturer:
- Bourns
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current | 5 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 82 W | |
| Configuration | Single Diode | |
| Package Type | TO-252 | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current 5 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 82 W | ||
Configuration Single Diode | ||
Package Type TO-252 | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
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