Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

R 1 961,79

(exc. VAT)

R 2 256,06

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30R 65.393R 1,961.79
60 - 60R 63.758R 1,912.74
90 +R 61.845R 1,855.35

*price indicative

RS stock no.:
249-6940
Mfr. Part No.:
IKW50N65RH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

15V

Maximum Power Dissipation

305 W

Number of Transistors

2

Package Type

PG-TO247-3

Configuration

Single

The Infineon TRENCHSTOP5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C

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