STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2

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R 69,85

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R 80,33

(inc. VAT)

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1 - 9R 69.85
10 - 99R 68.10
100 - 249R 66.06
250 - 499R 63.42
500 +R 60.88

*price indicative

Packaging Options:
RS stock no.:
248-4894
Mfr. Part No.:
STGH30H65DFB-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

260 W

Number of Transistors

1

Configuration

Single

Package Type

H2PAK-2

The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode

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